G80N60UFD – SGH80N60UFD

G80N60UFD Datasheet PDF learn more.

Part number : G80N60UFD

Functions : This is a kind of semiconductor. SGH80N60UFD.

Pin arrangement :

Package information :

Manufacturer : Fairchild Semiconductor

Image :

G80N60UFD Datasheet PDF

The texts in the PDF file :

SGH80N60UFD IGBT SGH80N60UFD Ultrafast IGBT General

Description

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Features

• • • • High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P G C E www.DataSheet.net/ E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL

Description

Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes,/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGH80N60UFD 600 ± 20 80 40 220 25 280 195 78 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. —Max. 0.64 0.83 40 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGH80N60UFD Rev. B1 Datasheet pdf – http://www.DataSheet4U.co.kr/ SGH80N60UFD Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut- [ … ]

G80N60UFD PDF File



This entry was posted in Uncategorized. Bookmark the permalink.