G4PC50F – IRG4PC50F

G4PC50F Datasheet PDF learn more.

Part number : G4PC50F

Functions : This is a kind of semiconductor. IRG4PC50F.

Pin arrangement :

Package information :

Manufacturer : International Rectifier

Image :

G4PC50F Datasheet PDF

The texts in the PDF file :

PD 91468C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50F Fast Speed IGBT

Features

• Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Benefits • Generation 4 IGBT’s offer highest efficiency available • IGBT’s optimized for specified application conditions • Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBT’s Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance RθJC RθCS RθJA Wt Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight www.irf.com TO-247AC Max. 600 70 39 280 280 ± 20 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Typ. ––– 0.24 ––– 6 (0.21) Max. 0.64 ––– 40 ––– Units °C/W g (oz) 1 12/30/00 IRG4PC50F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES V(BR)ECS Collector-to-Emitter Breakdown Voltage 600 — — Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 250µA V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.62 — V/°C VGE = 0V, IC = 1.0mA — 1.45 1.6 IC = 39A VGE = 15V [ … ]

G4PC50F PDF File



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