G03H1202 – High Speed 2-Technology

G03H1202 Datasheet PDF learn more.

Part number : G03H1202

Functions : This is a kind of semiconductor. High Speed 2-Technology.

Pin arrangement :

Package information :

Manufacturer : Infineon

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G03H1202 Datasheet PDF

The texts in the PDF file :

IGA03N120H2 HighSpeed 2-Technology C • • Designed for: – TV – Horizontal Line Deflection 2nd generation HighSpeed-Technology for 1200V applications offers: – loss reduction in resonant circuits – temperature stable behavior – parallel switching capability – tight parameter distribution – Eoff optimized for IC =3A – simple Gate-Control G E P-TO220-3-31 (FullPAK) P-TO220-3-34 (FullPAK) • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGA03N120H2 IGA03N120H2 VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj,max 150°C 150°C Marking G03H1202 G03H1202 Package P-TO-220-3-31 P-TO-220-3-34 Ordering Code Q67040-S4648 Q67040-S4654 Maximum Ratings Parameter Collector-emitter voltage TC = 100°C, f = 32kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40…+150 260 °C VGE Ptot ±20 29 V W ICpuls Triangular collector peak current (VGS = 15V) Symbol Value 1200 8.2 9 9 Unit V A DataShee DataSheetV C E ICpk DataSheet Power Semiconductors DataSheet 4 U .com 1 Mar-04, Rev. 2.0 IGA03N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient RthJA P-TO-220-3-31 P-TO-220-3-34 64 RthJC 4.3 K/W Symbol Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 30 0 µ A VCE(sat) V G E = 15V, I C = 3A T j = 25 ° C T j = 15 0 ° C V G E = 10V, I C = 3A , T j = 25 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) I C = 90 µ A , V C E = V G E T j = 25 ° C T j = 15 0 ° C Gate-emitter leak [ … ]

G03H1202 PDF File



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