FT0107MN – (FT0102MN – FT0109MN) SURFACE MOUNT TRIAC

FT0107MN Datasheet PDF learn more.

Part number : FT0107MN

Functions : This is a kind of semiconductor. (FT0102MN – FT0109MN) SURFACE MOUNT TRIAC.

Pin arrangement :

Package information :

Manufacturer : Fagor

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FT0107MN Datasheet PDF

The texts in the PDF file :

FT01…N LOGIC LEVEL TRIAC SOT223 (Plastic) On-State Current 1 Amp Gate Trigger Current < 10 mA Off-State Voltage MT2 200 V ÷ 800 V (07, 09) 200 V ÷ 600 V (02, 03, 04, 05) MT1 MT2 G This series of TRIAC s uses a high perfor mance PNPN technology. These parts are intended for general purpose AC switching applications with highly inductive loads. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER RMS On-state Current (full sine wave) Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Average Gate Power Dissipation Critical rate of rise of on-state current Operating Temperature Storage Temperature Soldering Temperature 10s max CONDITIONS All Conduction Angle, TC = 95 ºC Full Cycle, 60 Hz (t = 16.7 ms) Full Cycle, 50 Hz (t = 20 ms) tp = 10 ms, Half Cycle 20 µs max. Tj =125ºC IG = 2x IGT, tr £100ns f= 120 Hz, Tj =125ºC Tj =125ºC Value 1 8.5 8 0.32 1 0.1 20 (-40 +125) (-40 +150) 260 Unit A A A A2s A W A/µs ºC ºC ºC IT(RMS) ITSM ITSM I2t IGM PG(AV) dI/dt Tj Tstg Tsld SYMBOL PARAMETER Repetitive Peak Off State Voltage B 200 D 400 VOLTAGE M 600 S* 700 N* 800 Unit V VDRM VRRM * 07, 09 sensitivities Feb - 05 Free Datasheet http:/// FT01...N LOGIC LEVEL TRIAC Electrical Characteristics SYMBOL PARAMETER Gate Trigger Current Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current CONDITIONS VD = 12 VDC , RL = 33W, VD = 12 VDC , RL = 33W, VD = VDRM , RL = 3.3KW, Tj = 25 ºC Quadrant Q1÷Q3 MAX 3 Q4 MAX 3 Tj = 25 ºC Q1÷Q3 MAX Q1÷Q4 MAX MIN MIN MAX MAX Q1,Q3,Q4 MAX Q2 MAX MIN SENSITIVITY 02 03 04 05 07 09 3 5 5 5 5 1.3 1.3 0.2 0.2 7 7 10 10 10 10 7 7 10 10 15 20 20 20 20 10 10 20 20 20 Unit IGT (1) VGT VGD IH (2) IL 5 10 mA 7 10 mA V V V V 10 mA mA 15 mA 25 mA 50 V/µs Tj = 125 ºC Q1÷Q3 Q1÷Q4 IT = 50 mA , Gate open, Tj = 25 ºC IG = 1.2 IGT, Tj = 25 ºC Q1, Q3 dV/dt (2) (dI/dt)c (2) Critical Rate of Voltage Rise VD = 0.67 x [ ... ]

FT0107MN PDF File



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