FS8205A – Dual N-Channel Enhancement Mode Power MOSFET

FS8205A Datasheet PDF learn more.

Part number : FS8205A

Functions : This is a kind of semiconductor, Dual N-Channel Enhancement Mode Power MOSFET.

Pin arrangement :

Package information :

Manufacturer : Fortune Semiconductor

Image :

FS8205A Datasheet PDF

The texts in the PDF file :

REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy’ Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET For RefPerrFoepOnecRrteTieUOsnNlEy’ Fortune Semiconductor Corporation 富晶電子股份有限公司 23F, No. 29-5, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.:886-2-28094742 Fax:886-2-28094874 www.ic-fortune.com This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product 1.


1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A) 2. Applications  Li-ion battery management applications 3. Ordering Information Product Number


FS8205A TSSOP8 package version Package Type TSSOP-8 Quantity/Reel 3,000 4. Pin Assignment For RefPerrFoepOnecRrteTieUOsnNlEy’ 5. Absolute Maximum Ratings Symbol VDS VGS ID @TA = 25℃ ID @TA = 70℃ IDM PD @TA = 25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 6. Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ±12 6 5 25 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Value Max. 125 Unit ℃/W 7. Electrical Characteristics Electrical Characteristics @Tj = 25℃ ( unless otherwise specified ) Symbol Parameter Test Conditions Static Characteristics BVDSS Δ BVDSS/Δ Tj RDS(ON) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance2 VGS = 0V, ID = 250uA Reference to 25℃, ID=1mA VGS = 4.5V, ID = 4A VGS = 2.5 [ … ]

FS8205A PDF File

This entry was posted in Uncategorized. Bookmark the permalink.