FPD750P100 – 0.5W PACKAGED POWER PHEMT

FPD750P100 Datasheet PDF learn more.

Part number : FPD750P100

Functions : This is a kind of semiconductor, 0.5W PACKAGED POWER PHEMT.

Pin arrangement :

Package information :

Manufacturer : Filtronic Compound Semiconductors

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FPD750P100 Datasheet PDF

The texts in the PDF file :

0.5W PACKAGED POWER PHEMT • FEATURES ♦ 26.5 dBm Linear Output Power ♦ 18.5 dB Power Gain at 2 GHz ♦ 11.5 dB Maximum Stable Gain at 10 GHz ♦ 36 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz FPD750P100 • DESCRIPTION AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750P100 also features Si3N4 passivation and is also available in die form and in the low cost plastic SOT89, SOT343, and DFN plastic packages. Typical applications include commercial and other narrowband and broadband high-performance amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. • ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1dB Gain Compression Power Gain at P1dB Maximum Stable Gain (S21/S12) Symbol P1dB G1dB SSG Test Conditions VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS f = 2 GHz f = 10 GHz Power-Added Efficiency Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (see Notes) IDSS IMAX GM IGSO |VP| |VBDGD| θJC PAE IP3 VDS = 8 V; IDS = 50% IDSS; POUT = P1dB VDS = 8V; IDS = 50% IDSS Matched for optimal power VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS ≅ +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 0.75 mA IGD = 0.75 mA VDS > 6V 0.7 14.5 185 36 230 375 200 1 1.0 16.0 48 15 1.3 280 dBm mA mA mS µA V V °C/W 22.0 10.5 23.0 11.5 45 dB dB % Min 25.0 18.0 Typ [ … ]

FPD750P100 PDF File



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