D78F0535 – UPD78F0535

D78F0535 Datasheet PDF learn more.

Part number : D78F0535

Functions : This is a kind of semiconductor, UPD78F0535.

Pin arrangement :

Package information :

Manufacturer : NEC

Image :

D78F0535 Datasheet PDF

The texts in the PDF file :

Preliminary User’s Manual 78K0/KE2 8-Bit Single-Chip Microcontrollers µPD78F0531 µPD78F0532 µPD78F0533 µPD78F0534 µPD78F0535 µPD78F0536 µPD78F0537 µPD78F0537D The µPD78F0537D has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function has been used, due to issues with respect to the number of times the flash memory can be rewritten. NEC Electronics Document No. U17260EJ3V1UD00 (3rd edition) Date Published August 2005 N CP(K) Printed in Japan 2004 [MEMO] 2 Preliminary User’s Manual U17260EJ3V1UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN). 2 HANDLING OF UNUSED INPUT PINS Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must be judged separately for each device and according to related specifications governing the device. 3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quick [ … ]

D78F0535 PDF File

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