D1875 – NPN EPITAXIAL SILICON TRANSISTOR

D1875 Datasheet PDF learn more.

Part number : D1875

Functions : This is a kind of semiconductor, NPN EPITAXIAL SILICON TRANSISTOR.

Pin arrangement :

Package information :

Manufacturer : UTC

Image :

D1875 Datasheet PDF

The texts in the PDF file :

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 POWER TRANSISTOR „ FEATURES NPN EPITAXIAL SILICON TRANSISTOR * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION Pin Assignment 1 2 3 E C B E C B E C B E C B E C B Packing Tape Box Bulk Tape Reel Tape Box Bulk Ordering Number Package Lead Free Halogen Free 2SD1875L-x-T92-B 2SD1875G-x-T92-B TO-92 2SD1875L-x-T92-K 2SD1875G-x-T92-K TO-92 2SD1875L-x- T92-R 2SD1875G-x- T92-R TO-92 2SD1875L-x-T9N-B 2SD1875G-x-T9N-B TO-92NL 2SD1875L-x-T9N-K 2SD1875G-x-T9N-K TO-92NL Note: Pin Assignment E: EMITTER C: COLLECTOR B: BASE www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., LTD 1 of 2 QW-R201-057,D / 2SD1857 „ PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector power dissipation Collector current Collector current SYMBOL VCBO VCEO VEBO PC IC ICP NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) RATINGS 120 120 5 1 2 3 UNIT V V V W A A Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (TA=25℃) MIN 120 120 5 TYP MAX UNIT V V V µA µA V MHz pF PARAMETER SYMBOL TEST CONDITIONS Collector-base breakdown voltage BVCBO IC=50µA Collector-emitter breakdown voltage BVCEO IC=1mA Emitter-base breakdown voltage BVEBO IE=50µA Collector cut-off current ICBO VCB=100V Emitter cut-off current IEBO VEB=4V DC current transfer ratio hFE VCE=5V, IC=0.1A Collector-emitter saturation voltage VCE(sat) IC=/IB=1A/0.1A (Note) Transition frequency fT VCE=5V, IE= -0.1A, f=30MHz. Output capacitance Cob VCB=10V, IE=0A, f=1MHz (Note) Note: Measured using pulse c [ … ]

D1875 PDF File



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