D1303 – NPN Silicon Epitaxial Planar Transistor

D1303 Datasheet PDF learn more.

Part number : D1303

Functions : This is a kind of semiconductor, NPN Silicon Epitaxial Planar Transistor.

Pin arrangement :

Package information :

Manufacturer : SEMTECH

Image :

D1303 Datasheet PDF

The texts in the PDF file :

ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations.

Features

˙ High emitter-base voltage VEBO=7.5V(min)* ˙ High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA) ˙ Low on resistance Ron=0.6Ω (Typ.) (IB=1mA) TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 25 16 7.5* 300 30 400 125 -55 to +125 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru ® ST 2SD1303 Characteristics at Tamb=25 oC DC Current Gain at VCE=2V, IC=4mA (for) at VCE=2V, IC=4mA (rev) Collector Cutoff Current at VCB=25V Emitter Cutoff Current at VEB=7.5V Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Base Emitter Saturation Voltage at IC=100mA, IB=10mA Transition Frequency at VCE=10V, IE=1mA Collector Output Capacitance at VCB=10V, f=1MHz On Resistance at IB=1mA, f=1KHz, Vin=0.3V Symbol hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT COB Ron Min. 200 20 – G S P FORM A IS AVAILABLE Typ. 60 10 0.6 Max. 800 0.1 0.1 0.25 1 – Unit µA µA V V MHz pF Ω SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 09/04/2003 ST 2SD1303 COLLECTOR EMITTER SATURATION VOLTAGE, V 100 VCE(sat) – IC 30 10 3 1 0.3 0.1 0.03 Ta=75 C 25 C -25 C 0.01 0.01 0.03 0.1 0.3 1 3 COLLECTOR CURRENT, A 10 1000 300 100 RON – IB I B =1mA Vh V VA 30 f=1KHz V=0.3V 10 3 1 0.3 0.1 0.01 0.03 0.1 0.3 1 3 BASE CURRENT, mA 10 ON RESISTANCE, DC CURRENT GAIN COLLECTOR OUTPUT CAPACITANCE, pF Cob – VCB 24 20 16 12 8 4 0 [ … ]

D1303 PDF File



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