CS6822 – NPN Transistor

CS6822 Datasheet PDF learn more.

Part number : CS6822

Functions : This is a kind of semiconductor, NPN Transistor.

Pin arrangement :

Package information :

Manufacturer : CanSheng

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CS6822 Datasheet PDF

The texts in the PDF file :

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. ww w. s z c a n s h e n g .c o m TO-92 Plastic-Encapsulate Transistors CS6822 TRANSISTOR (NPN) TO-92 TO-92 FEATURES · power switching applications 1. 2. 3. Emitter Collector Base 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol (符号) VCBO VCEO VEBO IC PC Tj Tstg Parameter (参数名称) Collector-Base Voltage (集电极-基极电压) Collector-Emitter Voltage (集电极-发射极电压) Emitter-Base Voltage (发射极-基极电压) Collector Current -Continuous (集电极电流) Collector Power Dissipation (耗散功率) Junction Temperature (结温) Storage Temperature (储存温度) Value (额定值) 700 480 9 0.5 0.75 150 -55-150 Units (单位) V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter (参数名称) Collector-base breakdown voltage 集电极-基极击穿电压 Collector-emitter breakdown voltage 集电极-发射极击穿电压 Emitter-base breakdown voltage 发射极-基极击穿电压 Collector cut-off current 集电极-基极截止电流 Collector cut-off current 集电极-发射极截止电流 Emitter cut-off current 发射极-基极截止电流 DC current gain 直流电流增益 DC current gain 直流电流增益 Collector-emitter saturation voltage 集电极-发射极饱和压降 Base-emitter saturation voltage 发射极-基极饱和压降 Symbol (符号) V(BR)CB O V(BR)CE O V(BR)EBO ICBO ICEO IEBO hFE hFE VCE(sat) VBE(sat) Test conditions (测试条件) IC= 100μA, IE=0 IC= 1mA, IB=0 IE=100μA, IC=0 VCB=600 V , IE=0 VCE=400V , IB=0 MIN TYP MAX (最小值) (典型值) (最大值) 700 480 9 1 10 1 8 8 0.5 1.2 V V 30 UNIT (单位) V V V μA μA μA VEB=9V , IC=0 VCE=5V, IC= 100mA VCE=5V, IC= 1mA IC=200mA, IB= 20mA IC=200mA, IB= 20mA CLASSIFICATION CLASSIFICATION OF hFE Range 8-15 15-20 20-25 25-30 1/2 http://www.Datashee [ … ]

CS6822 PDF File

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