CS2N60A4H – Silicon N-Channel Power MOSFET

CS2N60A4H Datasheet PDF learn more.

Part number : CS2N60A4H

Functions : This is a kind of semiconductor, Silicon N-Channel Power MOSFET.

Pin arrangement :

Package information :

Manufacturer : Huajing Microelectronics

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CS2N60A4H Datasheet PDF

The texts in the PDF file :

Silicon N-Channel Power MOSFET CS2N60 A4H ○R General

Description

: VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard..

Features

: l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 [ … ]

CS2N60A4H PDF File



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