CPM2-1200-0025B – Silicon Carbide Power MOSFET

CPM2-1200-0025B Information is available here.

Part Number : CPM2-1200-0025B

Function : This is a kind of semiconductor, Silicon Carbide Power MOSFET.

Pinouts :

Package :

Manufacturer : Cree

Image :

CPM2-1200-0025B データシート

Some text files in PDF file :

VDS 1200 V CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET

Features

Package ID @ 120˚C 50 A RDS(on) 25 mΩ N-Channel Enhancement Mode • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits • • • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications • • • • • Solar Inverters High Voltage DC/DC Converters Motor Drives EV Chargers UPS Part Number CPM2-1200-0025B Package Die Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 107 50 150 -10/+25 -55 to +150 260 Unit A Test Conditions VGS@20 V, TC = 25˚C VGS@20 V, TC = 120˚C Note Note 1 IDS (DC) IDS (pulse) Pulsed Drain Current VGS TJ , Tstg TL Gate Source Voltage Operating Junction and Storage Temperature Solder Temperature A V ˚C ˚C Pulse width tP limited by Tjmax TC = 25˚C Note (1): Assumes a RθJC < 0.32 K/W f 1 CPM2-1200-0025B Rev. Free Datasheet http://www.nDatasheet.com Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Min. 1200 1.9 Typ. 2.3 1.6 TBD 2 Max. Unit V Test Conditions VGS = 0 V, ID = 100 μA VDS = 10V, ID = 1 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 1 mA VDS = 1200 V, VGS = 0 V Note V 100 TBD 0.5 μA μA mΩ S IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on)i tri td(off)i tfi EON EOFF RG Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss Turn Off Switching Loss Internal Gate Resistance TBD VDS = 1200 V, VGS = 0 V TJ = 150ºC VGS [ ... ]

CPM2-1200-0025B PDF File



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