C2712 – NPN EPITAXIAL SILICON TRANSISTOR

C2712 Datasheet PDF learn more.

Part number : C2712

Functions : This is a kind of semiconductor, NPN EPITAXIAL SILICON TRANSISTOR.

Pin arrangement :

Package information :

Manufacturer : WEJ

Image :

C2712 Datasheet PDF

The texts in the PDF file :

NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=600MHz 2SC2715 SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 Unit:mm ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta=25oC* Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic PD Tj Tstg Rating 30 15 5 50 225 150 -55~150 (Ta=25 oC) Unit V V V mA mW OC OC Electrical Characteristics (Ta=25 oC) Parameter Symbol MIN. TYP. MAX. Unit Condition Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage# Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Capacitance Collector-Gain-Bandwidth Product BVCBO BVCEO BVEBO ICBO IEBO HFE VCE(sat) Cob fT 30 15 5 28 100 1.3 700 1100 50 50 300 0.5 1.7 V V V nA nA V PF MHz IC=100 A IE=0 IC=1mA IB=0 IE=100 A IC=0 VCB=12V, VE=0 VCB=3V, IC=0 VCB=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=10,f=1MHz VCE=5V, IC=5mA *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC # Pulse Test: Pulse Width 300uS Duty cycle 2% DEVICE MARKING: 2SC2715=J8 [ … ]

C2712 PDF File



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