BUP311D – IGBT With Antiparallel Diode Preliminary data sheet

BUP311D Datasheet PDF learn more.

Part number : BUP311D

Functions : This is a kind of semiconductor, IGBT With Antiparallel Diode Preliminary data sheet.

Pin arrangement :

Package information :

Manufacturer : Infineon Technologies

Image :

BUP311D Datasheet PDF

The texts in the PDF file :

Infineon IGBT With Antiparallel Diode BUP 311D Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Pin 1 G Type BUP 311D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code ON REQUEST C67078-A4102 Pin 3 E VCE IC Package TO-218 AB 1200V A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 20 12 TC = 25 °C TC = 100 °C Pulsed collector current, tp = 1 ms ICpuls 40 TC = 25 °C Diode forward current IF tbd TC = 100 °C Pulsed diode current, tp = 1 ms IFpuls tbd TC = 25 °C Power dissipation Ptot 125 W -55 … + 150 -55 … + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 May-06-1999 Infineon Maximum Ratings Parameter Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, junction – case Diode thermal resistance, chip case Symbol Values BUP 311D Unit °C – Tj Tstg – -55 … + 150 -55 … + 150 55 / 150 / 56 RthJC RthJCD ≤1 ≤ 2.5 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 3.4 4.3 6.5 3 3.7 – V VGE = VCE, IC = 0.3 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) – VGE = 15 V, IC = 8 A, Tj = 25 °C VGE = 15 V, IC = 8 A, Tj = 125 °C VGE = 15 V, IC = 16 A, Tj = 25 °C VGE = 15 V, IC = 16 A, Tj = 125 °C Zero gate voltage collector current ICES 0.4 mA nA 120 VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V Semiconductor Group 2 May-06-1999 Infineon AC Characteristics Transconductance BUP 311D gfs 4 600 60 38 – S pF tbd tbd tbd VCE = 20 V, IC = 8 A Input capacitance Cis [ … ]

BUP311D PDF File



This entry was posted in Uncategorized. Bookmark the permalink.