BSO110N03MSG – Power-Transistor

BSO110N03MSG Datasheet PDF learn more.

Part number : BSO110N03MSG

Functions : This is a kind of semiconductor, Power-Transistor.

Pin arrangement :

Package information :

Manufacturer : Infineon Technologies

Image :

BSO110N03MSG Datasheet PDF

The texts in the PDF file :

BSO110N03MS G OptiMOS™3 M-Series Power-MOSFET


• Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID V GS=10 V V GS=4.5 V 30 V 11 mΩ 13.9 12.1 A PG-DSO-8 • Qualified for consumer level application • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type BSO110N03MS G Package PG-DSO-8 Marking 110N03MS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D V GS=10 V, T A=25 °C V GS=10 V, T A=90 °C V GS=4.5 V, T A=25 °C V GS=4.5 V, T A=90 °C Pulsed drain current2) Avalanche current, single pulse3) I D,pulse I AS T A=25 °C T A=25 °C Avalanche energy, single pulse E AS I D=12.1 A, R GS=25 Ω Gate source voltage V GS Power dissipation1) P tot T A=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value Unit 10 secs steady state 12.1 10 A 8.4 6.6 10.8 8.5 7.5 5.9 85 12.1 20 ±20 2.5 1.56 -55 … 150 55/150/56 mJ V W °C Rev.1.1 page 1 2009-11-19 Parameter Thermal characteristics Thermal resistance, junction – soldering point Thermal resistance, junction – ambient Symbol Conditions BSO110N03MS G min. Values typ. Unit max. R thJS R thJA minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area1), t p≤10 s 6 cm2 cooling area1), steady state – – 35 K/W – 110 – 150 – 50 – 80 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=250 µA I DSS V DS=30 V, V GS=0 V, T j [ … ]


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