BLF184XR Datasheet PDF learn more.
Part number : BLF184XR
Functions : This is a kind of semiconductor. Power LDMOS transistor.
Pin arrangement :
Package information :
Manufacturer : NXP
The texts in the PDF file :
BLF184XR; BLF184XRS Power LDMOS transistor Rev. 3 — 1 April 2014 Product data sheet 1. Product profile 1.1 General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 CW 108 VDS PL (V) (W) 50 700 50 750 Gp (dB) 23.9 23.5 D (%) 73.5 81.9 1.2
and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applications NXP Semiconductors BLF184XR; BLF184XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin
BLF184XR (SOT1214A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF184XRS (SOT1214B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source  Connected to flange. 3. Ordering information Simplified outline Graphic symbol  VP  VP Table 3. Ordering information Type number Package Name
BLF184XR – flanged ceramic package; 2 mounting holes; 4 leads BLF184XRS – earless flanged ceramic package; 4 leads Version SOT1214A SOT1214B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature Min 6 65  – Max 135 +11 +150 225 Unit V V C C  Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. BLF184XR_BLF184XRS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 April 2014 © [ … ]
BLF184XR PDF File