BLD128D – BLD Series Transistors

Part number : BLD128D

Functions : BLD Series Transistors, This is Semiconductor.

Manufacturer : SI Semiconductors

Image :

BLD128D Datasheet PDF

The texts in the PDF file :

Shenzhen SI Semiconductors Co., LTD. Product Specification BLD 系列晶体管/ BLD SERIES TRANSISTORS ● 特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范 ● TURES:■HIGH VOLTAGE CAPABILITY ● 应用: 节能灯 电子镇流器 ● LICATION: ■FLUORESCENT LAMP BLD128D ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT 开关电源 电子变压器 ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY ● 最大额定值(Tc=25°C) ● Absolute Maximum Ratings(Tc=25°C) 参数 PARAMETER 集电极-基极电压 Collector-Base Voltage 集电极-发射极电压 Collector-Emitter Voltage 发射极-基极电压 Emitter- Base Voltage 集电极电流 Collector Current 集电极耗散功率 Total Power Dissipation 最大工作温度 Junction Temperature 贮存温度 Storage Temperature 符号 SYMBOL VCBO VCEO VEBO IC PC Tj Tstg 额定值 VALUE 700 400 9 5.0 70 150 -65-150 SOT-82 单位 UNIT V V V A W °C °C ● 电特性(Tc=25°C) ● Electronic Characteristics(Tc=25°C) 参数名称 CHARACTERISTICS 集电极-基极截止电流 Collector-Base Cutoff Current 集电极-发射极截止电流 Collector-Emitter Cutoff Current 集电极-发射极电压 Collector-Emitter Voltage 发射极-基极电压 Emitter -Base Voltage 集电极-发射极饱和电压 Collector-Emitter Saturation Voltae 发射极-基极饱和电压 Base-Emitter Saturation Voltage 电流放大倍数 DC Current Gain 贮存时间 Storage Time 下降时间 Falling Time 内置二极管正向压降 Diode Forward Voltage 符号 SYMBOL ICBO ICEO VCEO VEBO Vcesat Vbesat 测试条件 TEST CONDITION VCB=700V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=1.0A,IB=0.2A IC=4.0A,IB=1.0A IC=1.0A,IB=0.2A VCE=5V,IC=10mA hFE VCE=5V,IC=1.0A VCE=5V,IC=4.0A tS tf Vf VCC=5V,IC=0.5A (UI9600) IF=2.0A 7 10 5 1.5 4.0 µs 0.8 1.5 V 1 40 400 9 0.5 1.5 1.5 最小值 MIN 最大值 MAX 100 250 单位 UNIT µA µA V V V V Si semiconductors 2007.01 w [ … ]

BLD128D PDF File



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