BFG19 – NPN Silicon RF Transistor

BFG19 Datasheet PDF learn more.

Part number : BFG19

Functions : This is a kind of semiconductor. NPN Silicon RF Transistor.

Pin arrangement :

Package information :

Manufacturer : Infineon Technologies AG

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BFG19 Datasheet PDF

The texts in the PDF file :

BFG 19S NPN Silicon RF Transistor  For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG 19S Maximum Ratings Parameter Marking BFG19S 1=E Pin Configuration 2=B 3=E 4=C Package SOT-223 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 15 20 20 3 100 12 1 150 -65 … 150 -65 … 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS  75 °C 1) Junction temperature Ambient temperature Storage temperature mA W °C Thermal Resistance Junction – soldering point RthJS  75 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-26-1999 BFG 19S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V hFE 40 100 220 IEBO 10 µA ICBO 100 nA ICES 100 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Oct-26-1999 BFG 19S Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available F) IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz IC = 70 mA, VCE = 8 V, ZS = ZL= 50 [ … ]

BFG19 PDF File



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