BAW56S – Silicon Switching Diode Array (For high-speed switching applications Common anode)

BAW56S Datasheet PDF learn more.

Part number : BAW56S

Functions : This is a kind of semiconductor, Silicon Switching Diode Array (For high-speed switching applications Common anode).

Pin arrangement :

Package information :

Manufacturer : Siemens Group

Image :

BAW56S Datasheet PDF

The texts in the PDF file :

BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal (galvanic) isolated Diodes in one package 4 5 6 2 1 3 VPS05604 Type BAW 56S Marking Ordering Code A1s Q62702-A1253 Pin Configuration Package 1/4 = C1 2/5 = C2 3/6 = A1/2 SOT-363 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 85 °C Junction temperature Storage temperature Thermal Resistance Junction – ambient 1) Symbol Value 70 70 200 4.5 250 150 65 …+150 ≤ 530 ≤ 260 Unit V mA A mW °C VR VRM IF IFS Ptot Tj Tstg RthJA RthJS K/W Junction – soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAW 56S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. – Unit V(BR) VF 70 V mV I (BR) = 100 µA Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current – – 715 855 1000 1250 2.5 µA nA IR IR – VR = 70 V Reverse current VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C AC characteristics Diode capacitance – – 30 50 CD trr – – 1.5 6 pF ns VR = 0 V, f = 1 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAW 56S Forward current IF = f (TA*;TS) * Package mounted on epoxy Forward current IF = f V F) TA = 25°C 150 BAW 56 EHB00091 300 1 mA Ι F mA 200 100 TS 150 IF typ max TA 100 50 50 0 0 20 40 60 80 100 120 °C 150 0 0 0.5 1.0 V 1.5 TA,TS VF Permissible Pulse Load R thJS = f(t p) Permissible P [ … ]

BAW56S PDF File



This entry was posted in Uncategorized. Bookmark the permalink.