B834 – Silicon PNP transistor

B834 Datasheet PDF learn more.

Part number : B834

Functions : This is a kind of semiconductor, Silicon PNP transistor.

Pin arrangement :

Package information :

Manufacturer : BLUE ROCKET ELECTRONICS

Image :

B834 Datasheet PDF

The texts in the PDF file :

2SB834(BR3CA834R) Rev.C Feb.-2015 DATA SHEET 描述 /

Description

s TO-220 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220 Plastic Package. 特征 /

Features

饱和压降低,集电极耗散功率大,与 2SD880(BR3DD880R)互补。 Low collector saturation voltage, collector power dissipation, complementary to 2SD880(BR3DD880R). 用途 / Applications 用于音频功率放大。 Audio frequency power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 12 3 PIN1:Base PIN 2:Collector PIN 3:Emitter 放大及印章代码 / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 60~120 Y 100~200 GR 150~300 http://www.fsbrec.com 1/6 2SB834(BR3CA834R) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current – Continuous Base Current – Continuous Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperature Range 符号 Symbol VCBO VCEO VEBO IC IB PC(Ta=25℃) PC(TC=25℃) Tj Tstg 电性能参数 / Electrical Characteristics(Ta=25℃) 数值 Rating -60 -60 -7.0 -3.0 -0.5 1.5 30 150 -55~150 单位 Unit V V V A A W W ℃ ℃ 参数 Parameter Collector to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(1) DC Current Gain(2) Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector output capacitance Turn-On Time Storage Time Fall Time 符号 Symbol 测试条件 Test Conditions VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) IC=-50mA VCB=-60V VEB=-7.0V VCE=-5.0V VCE=-5.0V IC=-3.0A IB=0 IE=0 IC=0 IC=-0.5A IC=-3.0A IB=-0.3A VBE VCE=-5.0V IC=-0.5A fT VCE=-5.0V IC=-0.5A Cob VCB=-10V IE=0 f=1.0MHz ton tstg -IB1=IB2=0.2A tf 最小值 典型值 最大值 单位 Min Typ Max Unit -60 V -100 μA -100 μA 60 300 20 -0.5 -1.0 V -0.7 -1.0 [ … ]

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