B30H100G – Switch-mode Power Rectifier

B30H100G Datasheet PDF learn more.

Part number : B30H100G

Functions : This is a kind of semiconductor. Switch-mode Power Rectifier.

Pin arrangement :

Package information :

Manufacturer : ON Semiconductor

Image :

B30H100G Datasheet PDF

The texts in the PDF file :

MBR30H100CT, MBRF30H100CT Switch‐mode Power Rectifier 100 V, 30 A

Features

and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • These are Pb−Free Devices Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • ESD Rating: Human Body Model = 3B Machine Model = C http://onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES 100 VOLTS 1 2, 4 3 MARKING DIAGRAMS 4 1 2 3 TO−220 CASE 221A STYLE 6 AYWW B30H100G AKA ISOLATED TO−220 CASE 221D STYLE 3 AYWW B30H100G AKA 1 2 3 A = Assembly Location Y = Year WW = Work Week B30H100 = Device Code G = Pb−Free Package AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 5 1 Publication Order Number: MBR30H100CT/D MBR30H100CT, MBRF30H100CT MAXIMUM RATINGS (Per Diode Leg) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 156°C) Per Diode Per Device Symbol VRRM VRWM VR IF(AV) Value 100 15 30 Unit V A Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 151°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFM 30 A IFSM 250 A Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) TJ Tstg dv/dt +175 *65 to +175 10,000 °C °C V/ms Controlled Avalanche Energy (see test conditions [ … ]

B30H100G PDF File



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