AP1A003GMT-HF – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP1A003GMT-HF Information is available here.

Part Number : AP1A003GMT-HF

Function : This is a kind of semiconductor, N-CHANNEL ENHANCEMENT MODE POWER MOSFET.

Pinouts :

Package :

Manufacturer : Advanced Power Electronics

Image :

AP1A003GMT-HF データシート

Some text files in PDF file :

AP1A003GMT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID D 30V 0.99mΩ 260A S

Description

AP1A003 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5×6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. D D D S S S G PMPAK ® 5×6 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Chip), VGS @ 10V Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current 1 3 3 4 Rating 30 +20 260 57 46 300 104 5 -55 to 150 -55 to 150 Units V V A A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 1.2 25 Unit ℃/W ℃/W 1 201311181 Data and specifications subject to change without notice Free Datasheet http:/// AP1A003GMT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitanc [ … ]

AP1A003GMT-HF PDF File



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