6R165P – IPB60R165CP

6R165P Datasheet PDF learn more.

Part number : 6R165P

Functions : This is a kind of semiconductor, IPB60R165CP.

Pin arrangement :

Package information :

Manufacturer : Infineon

Image :

6R165P Datasheet PDF

The texts in the PDF file :

IPB60R165CP CoolMOS® Power Transistor

Features

• Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.165 Ω 39 nC PG-TO263 CoolMOS CP is specially designed for: • Hard switching topologies for Server and Telecom Type IPB60R165CP Package PG-TO263 Ordering Code SP000096439 Marking 6R165P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0…480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=7.9 A, V DD=50 V I D=7.9 A, V DD=50 V Value 21 13 61 522 0.79 7.9 50 ±20 ±30 192 -55 … 150 W °C A V/ns V mJ Unit A Rev. 2.1 page 1 2009-06-05 http:// IPB60R165CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 12 61 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction – case Thermal resistance, junction ambient R thJC R thJA SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) Soldering temperature, reflowsoldering T sold reflow MSL 1 -0.65 62 K/W 35 – 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I [ … ]

6R165P PDF File



This entry was posted in Uncategorized. Bookmark the permalink.