55N03LTA – Logic Level FET

55N03LTA Datasheet PDF learn more.

Part number : 55N03LTA

Functions : This is a kind of semiconductor. Logic Level FET.

Pin arrangement :

Package information :

Manufacturer : Philips

Image :

55N03LTA Datasheet PDF

The texts in the PDF file :

PHP/PHB/PHD55N03LTA TrenchMOS™ Logic Level FET Rev. 04 — 4 September 2002 Product data 1.

Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). 2.

Features

s Low on-state resistance s Fast switching. 3. Applications s Computer motherboard high frequency DC to DC converters. 4. Pinning information Table 1: Pinning – SOT78, SOT404, SOT428 simplified outlines and symbol Simplified outline mb mb mb Pin

Description

1 2 3 mb gate (g) drain (d) source (s) mounting base, connected to drain (d) [1] Symbol d g s 2 2 1 MBK106 MBB076 1 3 MBK116 3 MBK091 Top view 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) SOT428 (D-PAK) It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages. Philips Semiconductors PHP/PHB/PHD55N03LTA TrenchMOS™ Logic Level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Typ 11 15 Max 25 55 85 175 14 18 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR ID VGS IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) drain current (DC) gate-source voltage peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 25 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 Ω; VGS = 5V; starting Tj = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µ [ … ]

55N03LTA PDF File



This entry was posted in Uncategorized. Bookmark the permalink.