4N60F – Surface Mount N-Channel Power MOSFET

4N60F Datasheet PDF learn more.

Part number : 4N60F

Functions : This is a kind of semiconductor. Surface Mount N-Channel Power MOSFET.

Pin arrangement :

Package information :

Manufacturer : WEITRON

Image :

4N60F Datasheet PDF

The texts in the PDF file :

4N60 Surface Mount N-Channel Power MOSFET P b Lead(Pb)-Free

Description

: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Features

: 2 DRAIN * * RDS(ON) =2.5 Ohms @VGS Ultra low gate charge =10V * Low reverse transfer Capacitance 1 GATE * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 3 SOURCE DRAIN CURRENT 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE D-PAK3/(TO-251) D-PAK/(TO-252) TO-220 TO-220F Maximum Ratings(T A=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±30 Avalanche Current – (Note 1) Continuous Drain Current @ TC=25˚C @ TC=100˚C Pulsed Drain Current, TP Limited by TJMAX – (Note 1) IAR 4.4 ID 4.0 2.8 A IDM 16 Avalanche Energy, Single Pulsed (Note 2) Avalanche Energy, Repetitive, Limited by TJMAX EAS 276 mJ EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Total Power Dissipation 4N60P(T C=25˚C) 4N60F(T C=25˚C) 4N60I/D(TC=25˚C) 4N60P( Derate above25˚C) 4N60F( Derate above25˚C) 4N60I/D( Derate above25˚C) 100 33 77 PD 0.8 W 0.26 0.69 Operating Junction and Storage Temperature Range TJ,Tstg -55~+150 ˚C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. WEITRON http:www.weitron.com.tw 1/9 13-Apr-2011 4N60 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Static Characteristic Drain-Source Breakdown Voltage @VGS=0,ID=250μA Gate Threshold Voltage @VDS=VGS,ID=250μA Gate-Source Leakage current Fo [ … ]

4N60F PDF File



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