2SC1969 Datasheet PDF learn more. This is a silicon NPN epitaxial planar type transistor.
Part number : 2SC1969
Functions : RF Power Transistor
Package information : TO-220 Type
Manufacturer : Mitsubishi
The texts in the PDF file :
2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amlifiers on HF band mobile radio applications. NPN silicon epitaxial planar transistor intended as power transmitter up to UHF / mobile radio applications.
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1. High power gain : Vcc = 12 V, Po = 16 W, f = 27 Mhz
2. Emitter ballasted construction for high reliaiblity and good performances.
3. TO-22p package similarly is combinient for mounting
4. Ability of withstanding infinite load VSWR when operated at Vcc = 16V, Po = 20 W, f = 27 MHz.
10 to 14 watts output power class AB amplfiers applications in HF band
1. Collector-Base Voltage : VCBO = 60 V
2. Collector-Emitter Voltage : VCES = 60 V
3. Collector-Emitter Voltage : VCEO = 25 V
4. Collector Current : IC = 6 A
5. Emitter-Base Voltage : VEBO = 5 V
6. Collector Power Dissipation : PDISS = 20 W