Part number : 2N60B, SSP2N60B, SSS2N60B, SSW2N60B, SSI2N60B
Functions : 600V N-Channel MOSFET
Package information : TO-220, D2-PAK, I2-PAK Type
Manufacturer : Fairchild
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Discription :
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Pin Diagram
Features
• 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability, Typical Characteristics
Absolute Maximum Ratings
1. VDSS Drain-Source Voltage 600 V
2. ID Drain Current – Continuous (TC = 25°C) 2.0 A, – Continuous (TC = 100°C) 1.3 A
3. IDM Drain Current – Pulsed (Note 1) 6.0 A
4. VGSS Gate-Source Voltage ± 30 V
5. EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ
6. IAR Avalanche Current (Note 1) 2.0 A
7. EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ
8. dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
9. PD Power Dissipation (TA = 25°C) * 3.13 W
10. Power Dissipation (TC = 25°C) 54 W – Derate above 25°C 0.43 W/°C
