2N60B Datasheet PDF – 600V N-Channel MOSFET

Part number : 2N60B, SSP2N60B, SSS2N60B, SSW2N60B, SSI2N60B

Functions : 600V N-Channel MOSFET

Package information : TO-220, D2-PAK, I2-PAK Type

Manufacturer : Fairchild

Image

2N60B 600V mosfet

Discription :

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

 

Pin Diagram

2N60B datasheet pinout

 

Features

• 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability, Typical Characteristics

 

Absolute Maximum Ratings

1. VDSS Drain-Source Voltage 600 V
2. ID Drain Current – Continuous (TC = 25°C) 2.0 A, – Continuous (TC = 100°C) 1.3 A
3. IDM Drain Current – Pulsed (Note 1) 6.0 A
4. VGSS Gate-Source Voltage ± 30 V
5. EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ
6. IAR Avalanche Current (Note 1) 2.0 A
7. EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ
8. dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
9. PD Power Dissipation (TA = 25°C) * 3.13 W
10. Power Dissipation (TC = 25°C) 54 W – Derate above 25°C 0.43 W/°C

 

2N60B Datasheet PDF