2N3055 – NPN Complementary Power Transistor

Part number : 2N3055, 2N3055G

Function : Complementary Silicon Power Transistor

Package information : TO−204AA (TO−3) Type

Manufacturer : ON Semiconductor, MOSPEC, STMicroelectronics

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2N3055 NPN Power Transistor

Product Information

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices. Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.

 

Pinout

2N3055 pinout datasheet

Features

1. DC Current Gain – hFE = 20-70 @ IC = 4 Adc
2. Collector-Emitter Saturation Voltage – VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
3. Excellent Safe Operating Area
4. Pb-Free Packages are Available

MAXIMUM RATINGS

1. Collector-Emitter Voltage : VCEO = 60 Vdc
2. Collector-Emitter Voltage : VCER = 70 Vdc
3. Collector-Base Voltage : VCB = 100 Vdc
4. Emitter-Base Voltage : VEB = 7 Vdc
5. Collector Current-Continuous : IC = 15 Adc
6. Base Current : IB = 7 Adc
Reference Site : https://en.wikipedia.org/wiki/2N3055

2N3055 Datasheet PDF