2SD2353 – Silicon NPN Triple Diffused Type TRANSISTOR

2SD2353 Datasheet PDF learn more.

Part number : 2SD2353

Functions : This is a kind of semiconductor, Silicon NPN Triple Diffused Type TRANSISTOR.

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Package information :

Manufacturer : Toshiba Semiconductor

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2SD2353 Datasheet PDF

The texts in the PDF file :

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm • High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE (sat) = 0.4 V (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 6 Base current IB 0.6 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2 W 25 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-21 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob VCB = 60 V, IE = 0 VEB = 6 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 0.2 A VCE = 5 V, IC = 1.5 A IC = 1 A, IB = 10 mA VCE = 5 V, IC = 0.5 A VCE = 5 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Marking 2SD2353 Min Typ. Max Unit ― ― 100 μA ― ― 100 μA 60 ― ― V 800 ― 3200 350 ― ― ― 0.4 1.0 V ― 0.7 1.0 V ― 18 [ … ]

2SD2353 PDF File



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