2SB1644 – Power Transistor

2SB1644 Datasheet PDF learn more.

Part number : 2SB1644

Functions : This is a kind of semiconductor, Power Transistor.

Pin arrangement :

Package information :

Manufacturer : Rohm

Image :

2SB1644 Datasheet PDF

The texts in the PDF file :

Transistors Power Transistor (−80V, −4A) 2SB1644 2SB1644 !

Features

1) Low saturation voltage. (Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A) 2) Excellent DC current gain characteristics. !External dimensions (Units : mm) 13.1 3.2 10.1 5.08 2.54 (3) (2) (1) 1.24 0.78 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw = 100ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −80 −80 −5 −4 −6 30 150 −55~+150 Unit V V V A (DC) *A (Pulse) W (Tc = 25°C) °C °C 8.8 1.3 4.5 1.3 0.4 0to0.3 0.5Min. ROHM : PSD3 EIAJ : SC-83A (1) Base (2) Collector (3) Emitter !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SB1644 PSD3 EF T100 1000 !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance * Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. −80 −60 −5 − − − − 100 − − Typ. − − − − − − − − 12 100 Max. − − − −10 −10 −1.5 −1.5 320 − − Unit V V V µA µA V V − MHz pF Conditions IC = −50µA IC = −1mA IE = −50µA VCB = −80V VEB = −4V IC/IB = −3A/−0.3A IC/IB = −3A/−0.3A VCE/IC = −5V/−1A VCE = −5V , IE = 0.5A , f = 5MHz VCB = −10V , IE = 0A , f = 1MHz * * * [ … ]

2SB1644 PDF File



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