23N50E is a type of Power MOSFET (metal-oxide-semiconductor fluorescent transistor), an N-channel MOSFET used in high voltage and high current applications.
Part number : FMH23N50E
Functions : N-CHANNEL SILICON POWER MOSFET
Package information : TO-3P(Q) Type
Manufacturer : Fuji Electric Device Technology
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Description
23N50E is capable of handling voltages up to 500V and currents up to 23A. This MOSFET is used in a variety of power electronic circuits due to their ability to handle high voltages and high currents.
Features
1. Maintains both low power loss and low noise
2. Lower RDS(on) characteristic
3. More controllable switching dv/dt by gate resistance
4. Smaller VGSringing waveform during switching
5. Narrow band of the gate threshold voltage (3.0±0.5V)
6. High avalanche durability
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 500 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 23 A
4. Drain power dissipation : PD = 2.5 W
5. Avalanche curren : Iar = 23 A
7. Repetitive avalanche energy : Ear = 31.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C
Applications
1. Switching regulators
2. UPS (Uninterruptible Power Supply)
3. DC-DC converters
Other data sheets within the file : FMH23N50E
23N50E Datasheet PDF Download
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