20N40CL – MGP20N40CL

20N40CL Datasheet PDF learn more.

Part number : 20N40CL

Functions : This is a kind of semiconductor, MGP20N40CL.

Pin arrangement :

Package information :

Manufacturer : Motorola

Image :

20N40CL Datasheet PDF

The texts in the PDF file :

SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MGP20N40CL/D Advanced Information SMARTDISCRETES IGBT ™ MGP20N40CL Internally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation Voltage • High Pulsed Current Capability 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED) ® C G G Rge C E E CASE 221A–06, Style 9 TO–220AB MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage Gate–Emitter Voltage Collector Current — Continuous @ TC = 25°C Reversed Collector Current – pulse width Symbol VCES VCGR VGE Value CLAMPED CLAMPED CLAMPED 20 12 150 3.5 – 55 to 175 Unit Vdc Vdc Vdc Adc Apk Watts kV °C t 100 m s IC ICR PD ESD TJ, Tstg Total Power Dissipation @ TC = 25°C (TO–220) Electrostatic Voltage — Gate–Emitter Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – (TO–220) — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw Rq JC Rq JA TL 1.0 62.5 275 10 lbf in (1.13 N m) °C/W °C UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C @ Starting TJ = 150°C SMARTDISCRETES and TMOS are trademarks of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. EAS 550 150 mJ REV 1 TMOS © Motorola Motorola, Inc. 1997 Power MOSFET Transi [ … ]

20N40CL PDF File



This entry was posted in Uncategorized. Bookmark the permalink.