20J321 – GT20J321

20J321 Datasheet PDF learn more.

Part number : 20J321

Functions : This is a kind of semiconductor, GT20J321.

Pin arrangement :

Package information :

Manufacturer : TOSHIBA

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20J321 Datasheet PDF

The texts in the PDF file :

GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • • • The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) Low switching loss • • : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Unit: mm High speed: tf = 0.04 µs (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 ±20 20 40 20 40 45 150 −55 to 150 Unit V V A JEDEC JEITA TOSHIBA ― ― 2-10R1C A W °C °C Weight: 1.7 g (typ.) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 2.78 4.23 Unit °C/W °C/W ww.DataSheet Equivalent Circuit Collector Gate Emitter 1 2002-04-08 DataSheet 4 U .com GT20J321 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Symbol IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon Eoff VF trr Test Condition VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 2 mA, VCE = 5 V IC = 20 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min ― ― 3.5 ― ― ― ― Typ. ― ― ― 2.0 3000 0.06 0.04 0.17 0.24 0.04 0.34 0.40 0.43 ― 100 Max ±500 1.0 6.5 2.45 ― ― ― ― ― ― ― ― Unit nA mA V V pF Turn-on time Turn-off delay time Fall tim [ … ]

20J321 PDF File



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