2SK610 – N-Channel MOSFET Transistor

2SK610 Datasheet PDF learn more.

Part number : 2SK610

Functions : This is a kind of semiconductor. N-Channel MOSFET Transistor.

Pin arrangement :

Package information :

Manufacturer : Inchange Semiconductor

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2SK610 Datasheet PDF

The texts in the PDF file :

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) isc Product Specification 2SK610 DESCRIPTION ·High Voltage. ·High speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 400 ±20 V V 3A 80 150 -55~150 W ℃ ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK610 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 1mA VGS= 10V; ID= 2A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS=0 VSD Forward On-Voltage IS= 3A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=3A; RL=50Ω toff Turn-off time MIN TYP MAX UNIT 400 V 1.0 5.0 V 3.0 Ω ±100 nA 1 μA 1.3 V 60 90 ns 80 120 ns 50 90 ns 130 175 ns · isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn [ … ]

2SK610 PDF File

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TDA8357J – Full bridge vertical deflection output circuit in LVDMOS

TDA8357J Datasheet PDF learn more.

Part number : TDA8357J

Functions : This is a kind of semiconductor. Full bridge vertical deflection output circuit in LVDMOS.

Pin arrangement :

Package information :

Manufacturer : NXP

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TDA8357J Datasheet PDF

The texts in the PDF file :

INTEGRATED CIRCUITS DATA SHEET TDA8357J Full bridge vertical deflection output circuit in LVDMOS Preliminary specification File under Integrated Circuits, IC02 1999 Nov 10 Philips Semiconductors Preliminary specification Full bridge vertical deflection output circuit in LVDMOS FEATURES • Few external components required • High efficiency fully DC coupled vertical bridge output circuit • Vertical flyback switch with short rise and fall times • Built-in guard circuit • Thermal protection circuit • Improved EMC performance due to differential inputs. GENERAL DESCRIPTION TDA8357J The TDA8357J is a power circuit for use in 90° and 110° colour deflection systems for 25 to 200 Hz field frequencies, and for 4 : 3 and 16 : 9 picture tubes. The IC contains a vertical deflection output circuit, operating as a high efficiency class G system. The full bridge output circuit allows DC coupling of the deflection coil in combination with single positive supply voltages. The IC is constructed in a Low Voltage DMOS (LVDMOS) process that combines bipolar, CMOS and DMOS devices. DMOS transistors are used in the output stage because of absence of second breakdown. QUICK REFERENCE DATA SYMBOL Supplies VP VFB Iq(P)(av) Iq(FB)(av) Ptot Vi(dif)(p-p) Io(p-p) Flyback switch Io(peak) Tstg Tamb Tj maximum (peak) output current t ≤ 1.5 ms − −55 −25 − − − − − ±1.2 +150 +75 150 A °C °C °C supply voltage flyback supply voltage average quiescent supply current average quiescent flyback supply current total power dissipation during scan during scan 7.5 2VP − − − − − 12 45 10 − − 1000 − 18 66 15 10 8 V V mA mA W PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Inputs and outputs differential input voltage (peak-to-peak value) output current (peak-to-peak value) 1500 2.0 mV A Thermal data; in accordance with IEC 747-1 storage temperature ambient temperature junction temperature ORDERING INFORMATION TYPE NUMBER TDA8357J PACKAGE NAME DBS9P DESCRI [ … ]

TDA8357J PDF File

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