C828A データシート( 電子部品 ) – NPN Silicon Epitaxial Planar Transistor

Part number : C828A

Functions : NPN Silicon Epitaxial Planar Transistor, This is Semiconductor.

Manufacturer : SEMTECH

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C828A Datasheet PDF

The texts in the PDF file :

ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Collector Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj TS Value ST 2SC828 ST 2SC828A 30 45 25 45 7 100 50 400 150 -55 to +150 G S P FORM A IS AVAILABLE Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru ® ST 2SC828 / 828A Characteristics at Tamb=25 OC DC Current Gain at IC=2mA, VCE=5V Current Gain Group Q R S Collector Base Breakdown Voltage at IC=10µA ST 2SC828 ST 2SC828A Collector Emitter Breakdown Voltage at IC=2mA ST 2SC828 ST 2SC828A Emitter Base Breakdown Voltage at IE=10µA Collector Saturation Voltage at IC=50mA, IB=5mA Base Emitter Voltage at IC=10mA, VCE=5V Gain Bandwidth Product at IC=-2mA, VCE=10V Noise Figure at VCE=5V,IE=0.2mA, RG=2kΩ,f=1kHz Symbol hFE hFE hFE V(BR)CBO V(BR)CBO V(BR)CEO V(BR)CEO V(BR)EBO VCE(sat) VBE fT NF Min. 130 180 260 30 45 25 45 7 – – – – G S P FORM A IS AVAILABLE Typ. – – – 0.14 – 220 6 Max. 280 360 520 – – – – 0.8 – – Unit V V V V V V V MHz dB SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 [ … ]

C828A PDF File

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C5353 データシート( 電子部品 ) – 2SC5353

Part number : C5353

Functions : 2SC5353, This is Semiconductor.

Manufacturer : Toshiba

Image :

C5353 Datasheet PDF

The texts in the PDF file :

2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm • • Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) High collectors breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 900 800 7 3 5 1 2.0 25 150 www.DataSheet.co.kr Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A −55 to 150 Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Datasheet pdf – http://www.DataSheet4U.net/ 2SC5353 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Test Condition VCB = 720 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.15 A IC = 1.2 A, IB = 0.24 A IC = 1.2 A, IB = 0.24 A Output 300 Ω Min ― ― 900 800 1 [ … ]

C5353 PDF File

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