1SS133M – Hermetically Sealed Glass Switching Diodes

1SS133M Datasheet PDF learn more.

Part number : 1SS133M

Functions : This is a kind of semiconductor, Hermetically Sealed Glass Switching Diodes.

Pin arrangement :

Package information :

Manufacturer : Taiwan Semiconductor

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1SS133M Datasheet PDF

The texts in the PDF file :

Small Signal Product 1SS133M Taiwan Semiconductor 300mW, Hermetically Sealed Glass Switching Diodes FEATURES – Fast switching device (trr < 4.0 ns) - Through-hole mount device type - DO-34 package (JEDEC DO-204) - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - RoHS compliant - Solder hot dip Tin (Sn) lead finish - Cathode indicated by polarity band - Marking code: 133 DO-34 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 300 Working Inverse Voltage WIV 90 Average Rectified Current IO 150 Non-Repetitive Peak Forward Current Peak Forward Surge Current IFM IFSURGE 450 2 Operating Junction Temperature TJ + 175 Storage Temperature Range TSTG -65 to +200 UNIT mW V mA mA A oC oC PARAMETER SYMBOL Breakdown Voltage Forward Voltage Reverse Leakage Current Junction Capacitance IR=500nA IF=100mA VR=80V VR=0, f=1.0MHz BV VF IR Cj Reverse Recovery Time (Note 1) trr Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA MIN 80 --- MAX -1.2 500 4.0 4.0 UNIT V V nA pF ns Document Number: DS_S1403003 Version: C15 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig. 1 Forward Characteristics 100 Forward Current : IF (mA) 10 TA=125oC TA=75oC 1 TA=25oC TA=-25oC 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage : VF (V) Capacitance Between Terminals : CT (pF) Fig. 3 Capacitance Between Terminals Characteristics 3.0 f = 1 MHz 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 Reverse Voltage : VR (V) Fig. 5 Surge Current Characteristics 100 Reverse Recovery Time : tr (ns) Reverse Current : IR (nA) 1SS133M Taiwan Semiconductor 10000 1000 100 10 Fig. 2 Reverse Characteristics TA=100oC TA=75oC TA=50oC TA=25oC 1 0 20 40 60 80 100 120 Reverse Voltage : VR (V) Fig. 4 Reverse Recovery Time Characteristics 5 VR = [ ... ]

1SS133M PDF File



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