1N5390 – 1.5 Amp. Silicon Rectifier Diodes

1N5390 Datasheet PDF learn more.

Part number : 1N5390

Functions : This is a kind of semiconductor, 1.5 Amp. Silicon Rectifier Diodes.

Pin arrangement :

Package information :

Manufacturer : ETC

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1N5390 Datasheet PDF

The texts in the PDF file :

1N5391 1N5399 1.5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 (Plastic) Voltage 50 to 1000 V. Current 1.5 A. at 70°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C. 3. Max. soldering time, 3,5 sec. 4. Do not bend lead at a point closer than 2 mm. to the body. • Diffused junction • High current capability • The plastic material carries U/L recognition 94 V-0 • Terminals: Axial Leads • Polarity: Color band denotes cathode Maximum Ratings, according to IEC publication No. 134 1N 1N 1N 1N 1N 1N 1N 1N 1N 5391 5392 5393 5394 5395 5396 5397 5398 5399 VRRM IF(AV) IFRM IFSM Tj Tstg Peak recurrent reverse voltage (V) Forward current at Tamb = 70°C Recurrent peak forward current 8.3 ms. peak forward surge current (Jedec Method) 50 100 200 300 400 500 600 800 1000 1.5 A 10 A 50 A – 65 to + 150 °C – 65 to + 150 °C Operating temperature range Storage temperature range Electrical Characteristics at Tamb = 25°C VF IR Rthj-a Max. forward voltage drop at IF = 1.5 A Max. reverse current at VRRM at 25°C at 150°C Max. thermal resistance (I = 10 mm.) 1.2 V 5µA 300 µ A 60° C/W 1N5390 Characteristic Curves TYPICAL FORWARD CHARACTERISTIC FORWARD CURRENT DERATING CURVE 10 mm. – 10 mm. 10 1.5 1.2 R or L Load 10 0 0.9 10 -1 C – Load 0.6 Tj = 150°C Tj = 25°C 10 -2 0.3 0 10 -3 0 0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 5.4 VF ‘ instantaneous forward voltage (V) 25 50 75 100 125 150 175 Tamb, ambient temperature (°C) THERMAL RESISTANCE 90 80 MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT 100 IFM 50 60 20 40 1 cycle 10 20 I I 4 0 0 10 20 30 I, lead lenght (mm.) 2 1 2 4 10 20 100 Number of cycles at 60 Hz. [ … ]

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