06N03 – 25V N-Channel Enhancement Mode MOSFET

06N03 Datasheet PDF learn more.

Part number : 06N03

Functions : This is a kind of semiconductor. 25V N-Channel Enhancement Mode MOSFET.

Pin arrangement :

Package information :

Manufacturer : Pan Jit International

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06N03 Datasheet PDF

The texts in the PDF file :

PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), VGS@4.5V,IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : 06N03 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e – S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l VD S VGS ID ID M TA = 2 5 O C TA = 7 5 O C PD TJ , TS T G EAS RθJ C RθJ A Li mi t 25 +20 60 280 6 2 .5 3 7 .5 -5 5 to + 1 5 0 180 2 .0 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=27A, VDD=25V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W C /W O Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUL.19.2006 PAGE . 1 PJD06N03 ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e BVD SS V G S (th) RD S (o n) RD S (o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VG S =4.5V, ID =30A VG S =10V, ID =30A VD S =25V, VG S =0V V G S =+2 0 V, V D S =0 V V D S = 1 0 V , ID = 1 5 A 25 1 30 7 .5 5.0 3 9 .0 mΩ D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze [ ... ]

06N03 PDF File



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